 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BUZ 104 S SPP14N05 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * dv/dt rated * 175C operating temperature * also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 13.5 A RDS(on) 0.1 Package Ordering Code BUZ 104 S TO-220 AB Q67040-S4007-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 C TC = 100 C ID A 13.5 9.6 Pulsed drain current TC = 25 C IDpuls 54 E AS Avalanche energy, single pulse ID = 13.5 A, VDD = 25 V, RGS = 25 L = 571 H, Tj = 25 C mJ 52 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 13.5 A, V DS = 40 V, diF/dt = 200 A/s Tjmax = 175 C 13.5 3.5 A mJ kV/s dv/dt 6 V GS P tot Gate source voltage Power dissipation TC = 25 C 20 35 V W Semiconductor Group 1 29/Jan/1998 BUZ 104 S SPP14N05 Maximum Ratings Parameter Symbol Values Unit Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 C 4.3 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 20 A V GS(th) 2.1 IDSS 3 4 A Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 C V DS = 50 V, V GS = 0 V, Tj = 25 C V DS = 50 V, V GS = 0 V, Tj = 150 C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 9.6 A 0.076 0.1 Semiconductor Group 2 29/Jan/1998 BUZ 104 S SPP14N05 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Dynamic Characteristics Transconductance V DS 2 * ID * RDS(on)max, ID = 9.6 A gfs S 4 pF 270 340 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 95 120 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 50 65 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 13.5 A RG = 33 tr 9 15 Rise time V DD = 30 V, VGS = 10 V, ID = 13.5 A RG = 33 td(off) 22 35 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 13.5 A RG = 33 tf 18 30 Fall time V DD = 30 V, VGS = 10 V, ID = 13.5 A RG = 33 Qg(th) 16.5 25 nC Gate charge at threshold V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V Qg(7) 0.33 0.5 Gate charge at 7.0 V V DD = 40 V, ID = 13.5 A, V GS =0 to 7 V Qg(total) 7.11 11 Gate charge total V DD = 40 V, ID = 13.5 A, V GS =0 to 10 V V (plateau) 9.5 14 V Gate plateau voltage V DD = 40 V, ID = 13.5 A Semiconductor Group 3 5.9 29/Jan/1998 BUZ 104 S SPP14N05 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 C IS A 13.5 Inverse diode direct current,pulsed TC = 25 C ISM V SD - 54 V Inverse diode forward voltage V GS = 0 V, IF = 27 A trr 1.17 1.8 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/s Qrr 50 75 C Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/s - 0.1 0.15 Semiconductor Group 4 29/Jan/1998 BUZ 104 S SPP14N05 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 14 A 36 W Ptot 28 24 20 16 12 8 4 0 0 20 40 60 80 100 120 140 C 180 ID 12 11 10 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 C 180 TC TC Safe operating area ID = (VDS) parameter: D = 0, TC = 25C 10 2 t = 3.3s p Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 10 1 R DS (o n) ID V DS A = /I K/W ZthJC D 10 s 10 0 100 s 10 -1 D = 0.50 0.20 10 0 1 ms 10 ms 0.10 10 -2 single pulse 0.05 0.02 0.01 DC 10 -1 0 10 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 29/Jan/1998 BUZ 104 S SPP14N05 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 30 A 26 ID 24 22 20 18 16 14 12 10 8 6 4 2 0 c b a e g i Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.32 Ptot = 35W l k j VGS [V] a b c 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 a b c d e f g h RDS (on) 0.24 hd e f g 0.20 0.16 fh i j 0.12 i j k 10.0 d l 20.0 0.08 k 0.04 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 i h j k 8.0 9.0 10.0 20.0 0.00 V 5.0 0 4 8 12 16 20 A 26 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 35 A I D 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 29/Jan/1998 BUZ 104 S SPP14N05 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 9.6 A, VGS = 10 V 0.32 Gate threshold voltage V GS(th)= f (Tj) parameter:VGS=VDS, ID =20A 5.0 V 4.4 VGS(th) RDS (on) 0.24 4.0 3.6 0.20 3.2 2.8 0.16 98% 0.12 typ 2.4 2.0 1.6 max 0.08 typ 1.2 0.8 0.04 0.4 0.00 -60 -20 20 60 100 C 180 0.0 -60 -20 20 60 100 140 V Tj min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 A C pF Ciss IF 10 1 10 2 Coss Crss 10 0 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 29/Jan/1998 BUZ 104 S SPP14N05 Avalanche energy EAS = f (Tj) parameter:ID=13.5 A,VDD =25 V RGS =25 , L = 571 H 60 Typ. gate charge VGS = (QGate) parameter: ID puls = 14 A 16 V mJ EAS VGS 40 12 10 0,2 VDS max 30 8 0,8 VDS max 6 20 4 10 2 0 20 40 60 80 100 120 140 C Tj 0 180 0 1 2 3 4 5 6 7 nC 9 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 29/Jan/1998 |
Price & Availability of BUZ104S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |